Title :
Off-state leakage current of nano-scaled MOSFETs with high-k gate dielectric
Author :
Hong-Xia Liu ; Fei Ma ; Ji-Bin Fan ; Xiao-Jiao Fan ; Chen-Xi Fei ; Yi Luo ; Chen Liu
Author_Institution :
Key Lab. of Minist. of Educ. for Wide Band-Gap Semicond. Mater. &Devices, Xidian Univ., Xi´an, China
fDate :
Oct. 29 2012-Nov. 1 2012
Abstract :
The off-state leakage current characteristics of nano-scaled MOSFETs with high-k gate dielectric are thoroughly investigated. The off-state leakage current can be divided into three components and the influences of fringing induced barrier lowering (FIBL) effect and drain induced barrier lowering (DIBL) effect on each component are also investigated. For nano-scaled devices with high-k gates, the source leakage current becomes the major component of the off-state leakage current. The influences of structure parameters on the off-state leakage current are studied. The off-state performance of the devices with high-k gate dielectric can be improved by optimizing the device structure parameters.
Keywords :
MOSFET; high-k dielectric thin films; DIBL effect; FIBL effect; drain induced barrier lowering effect; fringing induced barrier lowering effect; high-k gate dielectric; nanoscaled MOSFET; off-state leakage current characteristics; Dielectrics; Leakage current; Logic gates; MOSFETs; Materials; Nanoscale devices; Permittivity;
Conference_Titel :
Solid-State and Integrated Circuit Technology (ICSICT), 2012 IEEE 11th International Conference on
Conference_Location :
Xi´an
Print_ISBN :
978-1-4673-2474-8
DOI :
10.1109/ICSICT.2012.6467944
