Multi-layered fabrication of microstructures and thin film transistors-application to polycrystalline silicon field emitters controlled by TFTs

Author

Hashiguchi, Gen ; Mimura, Hidenori ; Fujita, Hiroyuki

Author_Institution

Adv. Technol. Res. Lab., Nippon Steel Corp., Kanagawa, Japan

fYear

1996

fDate

11-15 Feb 1996

Firstpage

49

Lastpage

54

Abstract

We have fabricated a new multi-layered structure of a polycrystalline silicon field emitter array (poly-Si FEA) on top of a thin film transistor (TFT) by successive application of micromachining, TFT fabrication, and wafer bonding and dissolving processes. The TFT not only controls the field emission but also stabilizes it. Since the TFT does not consume the space for the poly-Si FEA fabrication, the structure will be a good candidate for high quality flat panel displays. In this paper, we demonstrate fabrication of the multi-layered structure and show a successful emission control by the TFT

Keywords

electron field emission; elemental semiconductors; micromechanical devices; silicon; thin film transistors; vacuum microelectronics; CVD; MEMS; Si; Si polycrystalline field emitters; TFT; dissolving; electrical characteristics; emission control; field emitter array; flat panel displays; micromachining; microstructures; multi-layered fabrication; polysilicon FEA fabrication; reactive ion etching; stabilisation; switching characteristics; thin film transistor; thin film transistors; wafer bonding; Circuits; Fabrication; Field emitter arrays; Glass; Micromachining; Microstructure; Optical arrays; Silicon compounds; Substrates; Thin film transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

Micro Electro Mechanical Systems, 1996, MEMS '96, Proceedings. An Investigation of Micro Structures, Sensors, Actuators, Machines and Systems. IEEE, The Ninth Annual International Workshop on

Conference_Location

San Diego, CA

Print_ISBN

0-7803-2985-6

Type

conf

DOI

10.1109/MEMSYS.1996.493828

Filename

493828