Fabrication of MEMS structure with nano-gap using photo-assisted electrochemical etching

Author

Kim, Dae Hyun ; Kim, Hyeon Cheol ; Chun, Kukjin

Author_Institution

Sch. of Electr. Eng. & Comput. Sci., Seoul Nat. Univ., South Korea

fYear

2005

fDate

30 Jan.-3 Feb. 2005

Firstpage

540

Lastpage

543

Abstract

In this paper, MEMS comb structures with several tens of nanometer gap and ultra high aspect ratio more than 125:1 has been achieved using modified photo-assisted electro-chemical etching method. It is possible to control the gap of the comb structure from 50 nm to 1 μm by adjusting the intensity of the light source, which is unusually blue LED (light emitting diodes) in this experiment. By changing the bias and the composition of electrolyte that consists of H₂O or DMF (dimethyl-formamide) based 5% HF (hydrofluoric acid) and 20% ethanol as a wetting agent, the characteristics of the etching were observed. Finally MEMS comb structure with uniform 200 nm gap and 25 μm depth was well defined.

Keywords

etching; micromachining; microsensors; 25 micron; 50 to 1000 nm; H₂O; HCON(CH₃)₂; HF; MEMS structure fabrication; comb structure; dimethyl-formamide; electrolyte; ethanol; hydro-fluodic acid; light emitting diodes; light source intensity; nanometer gap; photo-assisted electrochemical etching; ultra high aspect ratio; wetting agent; Fabrication; Hafnium; Light emitting diodes; Light sources; Lighting control; Microelectromechanical devices; Micromechanical devices; Nanostructures; Silicon; Wet etching;

fLanguage

English

Publisher

ieee

Conference_Titel

Micro Electro Mechanical Systems, 2005. MEMS 2005. 18th IEEE International Conference on

ISSN

1084-6999

Print_ISBN

0-7803-8732-5

Type

conf

DOI

10.1109/MEMSYS.2005.1453986

Filename

1453986