Title :
Preparation and piezoresistive characteristics of polycrystalline SnO2 films
Author :
Wang, Zhan He ; Ito, Hironobu ; Nakao, Masato ; Kamimura, Kiichi ; Onuma, Yoshiharu
Author_Institution :
Dept. of Electr. & Electron. Eng., Shinshu Univ., Nagano, Japan
Abstract :
Tin oxide thin films were deposited by dc magnetron sputtering in a gas mixture of Ar and O2. The films were characterized by X-ray diffraction and SEM observation, and showed preferred orientation in [110] or [211] planes. The properties of films depended on the substrate temperature and gas flow ratio of Ar/O2. The piezoresistive properties of these films have been measured by a conventional cantilever method. The gauge factor was 5-18 at room temperature
Keywords :
X-ray diffraction; gas sensors; piezoresistance; scanning electron microscopy; semiconductor growth; semiconductor materials; semiconductor thin films; sputter deposition; tin compounds; Ar-O2; Ar/O2 gas mixture; SEM observation; SnO2; X-ray diffraction; cantilever method; dc magnetron sputtering; gas flow ratio; gas sensor; gauge factor; piezoresistive characteristics; polycrystalline SnO2 films; preferred orientation; quartz substrate; substrate temperature; Area measurement; Argon; Piezoresistance; Sensor systems; Sputtering; Substrates; Temperature dependence; Temperature sensors; Tin; X-ray diffraction;
Conference_Titel :
Electronic Manufacturing Technology Symposium, 1995, Proceedings of 1995 Japan International, 18th IEEE/CPMT International
Conference_Location :
Omiya
Print_ISBN :
0-7803-3622-4
DOI :
10.1109/IEMT.1995.541016
