DocumentCode :
3423432
Title :
Understanding leakage current susceptibility in dielectrics using molecular modeling
Author :
Iwamoto, Nancy ; Krishnamoorthy, Ahila
fYear :
2009
fDate :
26-29 April 2009
Firstpage :
1
Lastpage :
1
Abstract :
Dielectric materials are universally used in the fabrication and packaging of transistors in microelectronics and displays, as well as used in discrete devices such as sensors, switches and photovoltaics. However, as device and interconnect sizes become smaller, the question of the source of electrical failure becomes more and more important. During the development of these materials it has been found that small changes in the molecular structure can lead to small increases in conductivity which is undesirable for most applications. Although important to the final commercial acceptance of the dielectric, leakage current is often one of the final properties measured when developing the chemistry of the dielectric, so a dielectric with very good mechanical properties can ultimately fail at customer due to the electrical properties. Knowledge of the susceptibility for electrical failure can be a great aid to the developer.
Keywords :
dielectric materials; leakage currents; dielectric materials; leakage current susceptibility; microelectronics; molecular modeling; Conducting materials; Dielectric materials; Displays; Fabrication; Leakage current; Mechanical factors; Microelectronics; Packaging; Photovoltaic cells; Switches;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Thermal, Mechanical and Multi-Physics simulation and Experiments in Microelectronics and Microsystems, 2009. EuroSimE 2009. 10th International Conference on
Conference_Location :
Delft
Print_ISBN :
978-1-4244-4160-0
Electronic_ISBN :
978-1-4244-4161-7
Type :
conf
DOI :
10.1109/ESIME.2009.4938437
Filename :
4938437
Link To Document :
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