Title :
Silicon profile transformation and sidewall roughness reduction using hydrogen annealing
Author :
Lee, Ming-Chang M. ; Yao, Jin ; Wu, Ming C.
Author_Institution :
Dept. of Electr. Eng., Univ. of California at Los Angeles, CA, USA
fDate :
30 Jan.-3 Feb. 2005
Abstract :
We report on a comprehensive study of the 3D profile transformation process for microstructures on silicon-on-insulator (SOI) substrates. Using hydrogen annealing, single crystalline microspheres (1 μm radius), micropillars, and circular cantilever beams have been successfully demonstrated. The annealed Si exhibits a surface roughness of 0.26 nm. A theoretical model is presented for the mass transport process, and the parametric dependence on temperature and pressure is characterized. We have used this process to fabricate submicrometer single mode optical waveguides on SOI and achieved a very low optical loss of 0.2 cm-1.
Keywords :
annealing; crystal microstructure; hydrogen; mass transfer; nanotechnology; optical waveguides; silicon; silicon-on-insulator; surface roughness; 0.26 nm; 1 micron; 3D profile transformation; Si; circular cantilever beams; hydrogen annealing; mass transport process; micropillars; microstructures; optical loss; pressure parametric dependence; sidewall roughness reduction; silicon profile transformation; silicon-on-insulator substrates; single crystalline microspheres; submicrometer single mode optical waveguides; temperature parametric dependence; Annealing; Crystal microstructure; Crystallization; Hydrogen; Nonlinear optics; Optical surface waves; Optical waveguides; Rough surfaces; Silicon on insulator technology; Structural beams;
Conference_Titel :
Micro Electro Mechanical Systems, 2005. MEMS 2005. 18th IEEE International Conference on
Print_ISBN :
0-7803-8732-5
DOI :
10.1109/MEMSYS.2005.1454000
