DocumentCode :
3424434
Title :
High-temperature CNFET charactristics
Author :
Amiri, Samaneh Soleimani ; Afzali-Kusha, Ali ; Forouzandeh, Behjat
Author_Institution :
Sch. of Electr. & Comput. Eng., Univ. of Tehran, Tehran
fYear :
2009
fDate :
26-29 April 2009
Firstpage :
1
Lastpage :
4
Abstract :
In this paper, we investigate the performance characteristic of CNFET inverter based on a new compact model. We consider temperature variation effects on the CNFET circuit performance implemented in a 32-nm technology. The results show in contrast to MOSFET sub-threshold current reduces in CNFET with temperature. So by using CNFET in high temperature applications we can obtain high speed and low leakage.
Keywords :
carbon nanotubes; field effect transistors; invertors; MOSFET; carbon nanotube field effect transistors; high-temperature CNFET; inverter; size 32 nm; Carbon nanotubes; Circuit optimization; FETs; Fluctuations; High performance computing; Inverters; MOSFET circuits; Photonic band gap; Semiconductor device modeling; Temperature dependence;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Thermal, Mechanical and Multi-Physics simulation and Experiments in Microelectronics and Microsystems, 2009. EuroSimE 2009. 10th International Conference on
Conference_Location :
Delft
Print_ISBN :
978-1-4244-4160-0
Electronic_ISBN :
978-1-4244-4161-7
Type :
conf
DOI :
10.1109/ESIME.2009.4938483
Filename :
4938483
Link To Document :
بازگشت