Title :
The impact of the floating-body effect suppression on SOI integrated circuits
Author :
Terauchi, M. ; Nishiyama, A. ; Mizuno, T. ; Yoshimi, M. ; Watanabe, S.
Author_Institution :
ULSI Res. Center, Toshiba Corp., Kawasaki, Japan
Abstract :
The bandgap engineering technique suppresses not only anomalies in the DC transfer characteristics of SOI CMOS circuits but also characteristics fluctuations of SOI MOSFETs. It is experimentally verified that the floating-body effects in 8 k SOI MOSFETs in 0.7 mm/sup 2/ wafer area cannot be controlled completely with a conventional fabrication technique. Thus it is concluded that the suppression of the floating body effects is essential to fabricate actual LSIs utilizing SOI devices.
Keywords :
CMOS integrated circuits; energy gap; integrated circuit technology; large scale integration; silicon-on-insulator; DC transfer characteristics; LSI; SOI CMOS circuit; SOI MOSFET; SOI device; SOI integrated circuit; bandgap engineering; fabrication; floating-body effect; fluctuations; Circuits; Fabrication; Fluctuations; Inverters; Ion implantation; MOSFETs; Photonic band gap; Propagation delay; Ring oscillators; Threshold voltage;
Conference_Titel :
Electron Devices Meeting, 1996. IEDM '96., International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-3393-4
DOI :
10.1109/IEDM.1996.554114
