DocumentCode
3424463
Title
The impact of the floating-body effect suppression on SOI integrated circuits
Author
Terauchi, M. ; Nishiyama, A. ; Mizuno, T. ; Yoshimi, M. ; Watanabe, S.
Author_Institution
ULSI Res. Center, Toshiba Corp., Kawasaki, Japan
fYear
1996
fDate
8-11 Dec. 1996
Firstpage
855
Lastpage
858
Abstract
The bandgap engineering technique suppresses not only anomalies in the DC transfer characteristics of SOI CMOS circuits but also characteristics fluctuations of SOI MOSFETs. It is experimentally verified that the floating-body effects in 8 k SOI MOSFETs in 0.7 mm/sup 2/ wafer area cannot be controlled completely with a conventional fabrication technique. Thus it is concluded that the suppression of the floating body effects is essential to fabricate actual LSIs utilizing SOI devices.
Keywords
CMOS integrated circuits; energy gap; integrated circuit technology; large scale integration; silicon-on-insulator; DC transfer characteristics; LSI; SOI CMOS circuit; SOI MOSFET; SOI device; SOI integrated circuit; bandgap engineering; fabrication; floating-body effect; fluctuations; Circuits; Fabrication; Fluctuations; Inverters; Ion implantation; MOSFETs; Photonic band gap; Propagation delay; Ring oscillators; Threshold voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1996. IEDM '96., International
Conference_Location
San Francisco, CA, USA
ISSN
0163-1918
Print_ISBN
0-7803-3393-4
Type
conf
DOI
10.1109/IEDM.1996.554114
Filename
554114
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