Title :
Manufacturability demonstration of an integrated SiGe HBT technology for the analog and wireless marketplace
Author :
Ahlgren, D.C. ; Gilbert, M. ; Greenberg, D. ; Jeng, J. ; Malinowski, J. ; Nguyen-Ngoc, D. ; Schonenberg, K. ; Stein, K. ; Groves, R. ; Walter, K. ; Hueckel, G. ; Colavito, D. ; Freeman, G. ; Sunderland, D. ; Harame, D.L. ; Meyerson, B.
Author_Institution :
Microelectron. Div., IBM Corp., Hopewell Junction, NY, USA
Abstract :
Early production results are reviewed for IBM´s integrated SiGe HBT technology. With a sample size of over 200 wafers, statistical control of key HBT parameters (F/sub T/, F/sub max/, R/sub bb/, R/sub bi/, /spl beta/) and other supporting devices, and benchmark circuit performance are shown. HBT device yield and reliability on 200 mm wafers are presented, demonstrating that the SiGe HBT is capable of meeting manufacturing requirement for the high performance wireless communications marketplace.
Keywords :
Ge-Si alloys; bipolar analogue integrated circuits; heterojunction bipolar transistors; integrated circuit manufacture; integrated circuit reliability; integrated circuit technology; integrated circuit yield; semiconductor materials; 200 mm; HBT device yield; HBT parameters; IBM; SiGe; analog applications; integrated SiGe HBT technology; manufacturability demonstration; production; reliability; statistical control; wireless applications; Costs; Electrical resistance measurement; Frequency; Germanium silicon alloys; Heterojunction bipolar transistors; Manufacturing; Microelectronics; Production; Silicon germanium; Wireless communication;
Conference_Titel :
Electron Devices Meeting, 1996. IEDM '96., International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-3393-4
DOI :
10.1109/IEDM.1996.554115
