Manufacturability demonstration of an integrated SiGe HBT technology for the analog and wireless marketplace

Author

Ahlgren, D.C. ; Gilbert, M. ; Greenberg, D. ; Jeng, J. ; Malinowski, J. ; Nguyen-Ngoc, D. ; Schonenberg, K. ; Stein, K. ; Groves, R. ; Walter, K. ; Hueckel, G. ; Colavito, D. ; Freeman, G. ; Sunderland, D. ; Harame, D.L. ; Meyerson, B.

Author_Institution

Microelectron. Div., IBM Corp., Hopewell Junction, NY, USA

fYear

1996

fDate

8-11 Dec. 1996

Firstpage

859

Lastpage

862

Abstract

Early production results are reviewed for IBM´s integrated SiGe HBT technology. With a sample size of over 200 wafers, statistical control of key HBT parameters (F/sub T/, F/sub max/, R/sub bb/, R/sub bi/, /spl beta/) and other supporting devices, and benchmark circuit performance are shown. HBT device yield and reliability on 200 mm wafers are presented, demonstrating that the SiGe HBT is capable of meeting manufacturing requirement for the high performance wireless communications marketplace.

Keywords

Ge-Si alloys; bipolar analogue integrated circuits; heterojunction bipolar transistors; integrated circuit manufacture; integrated circuit reliability; integrated circuit technology; integrated circuit yield; semiconductor materials; 200 mm; HBT device yield; HBT parameters; IBM; SiGe; analog applications; integrated SiGe HBT technology; manufacturability demonstration; production; reliability; statistical control; wireless applications; Costs; Electrical resistance measurement; Frequency; Germanium silicon alloys; Heterojunction bipolar transistors; Manufacturing; Microelectronics; Production; Silicon germanium; Wireless communication;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1996. IEDM '96., International

Conference_Location

San Francisco, CA, USA

ISSN

0163-1918

Print_ISBN

0-7803-3393-4

Type

conf

DOI

10.1109/IEDM.1996.554115

Filename

554115