• DocumentCode
    3424785
  • Title

    A wide frequency range, rugged silicon micro accelerometer with overrange stops

  • Author

    Suminto, James T.

  • Author_Institution
    Endevco, Sunnyvale, CA, USA
  • fYear
    1996
  • fDate
    11-15 Feb 1996
  • Firstpage
    180
  • Lastpage
    185
  • Abstract
    A rugged and wide frequency range silicon micro accelerometer with integral overrange stops has been developed for use in anthropomorphic test dummies and on vehicles for crash and sled safety testing. The accelerometer utilizes a monolithic piezoresistive cantilever type sensor crafted on (110) silicon wafer. Taking advantage of the unique vertical wall etching capability on (110) silicon, the geometry of the hinge, mass, and stop-gap can be defined precisely. It is limited only by the photolithographic accuracy instead of the etching time control. The piezoresistive gages are etch freed from the silicon wafer. Their cross sectional area is very small, 0.6 μm by 4.2 μm, thus needing very little strain energy to produce a useful signal. By locating them at an appropriate distance apart from the centrally support hinge, the gages are very efficient in picking up the acceleration force. A high sensitivity (nominally 0.2 mV/g) yet wide frequency range (nominally resonate at 28 kHz) sensor can be obtained. The etch freed gages enable the accelerometer to stabilize (or warm up) in less than 15 μs after power on. It also has minimal thermal zero shifts of ±6 mV in a wide temperature range from -54 to +100°C. Furthermore, the vertical wall etching capability on (110) silicon allows very narrow gaps between the mass tip and surrounding rim to “stop” the mass tip from traveling too far. These “overrange stops” protect the sensor from excessive g shock. The accelerometer demonstrates survivability under repeated high g shock in excess of 10000 g
  • Keywords
    accelerometers; automobiles; elemental semiconductors; etching; microsensors; photolithography; piezoresistive devices; safety systems; semiconductor device packaging; semiconductor technology; silicon; (110) silicon wafer; -54 to 100 C; 0.6 mum; 15 mus; 28 kHz; 4.2 mum; Si; Si microaccelerometer; accelerometer; airbag; anthropomorphic test dummies; cantilever; crash; etch freed gages; g shock; integral overrange stops; monolithic piezoresistive cantilever; photolithographic accuracy; piezoresistive gages; sled safety testing; stop-gap; survivability; thermal zero shifts; vehicle safety; vertical wall etching; Accelerometers; Anthropomorphism; Electric shock; Etching; Fasteners; Frequency; Piezoresistance; Silicon; Vehicle crash testing; Vehicle safety;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Micro Electro Mechanical Systems, 1996, MEMS '96, Proceedings. An Investigation of Micro Structures, Sensors, Actuators, Machines and Systems. IEEE, The Ninth Annual International Workshop on
  • Conference_Location
    San Diego, CA
  • Print_ISBN
    0-7803-2985-6
  • Type

    conf

  • DOI
    10.1109/MEMSYS.1996.493850
  • Filename
    493850