DocumentCode
3424865
Title
Silicon based nano lead for single cell recording
Author
Shuzo, M. ; Arai, H. ; Kanzaki, R. ; Shimoyama, I.
Author_Institution
Graduate Sch. of Inf. Sci. & Technol., Tokyo Univ., Japan
fYear
2005
fDate
30 Jan.-3 Feb. 2005
Firstpage
766
Lastpage
769
Abstract
In this paper "nano lead" is defined as a submicron scale electrode for recording a neural activity from a single cell. The nano lead was fabricated with the technique of EB direct writing, DRIE, and FIB. The tiny recording site of the nano lead made very high electrode impedance at the low frequency, 100 MΩ at 100 Hz and 500 MΩ at DC. It caused the base line of the nerve potential unstable, but the IPSP signals of Aplysia were measured clearly.
Keywords
biomolecular electronics; lead; microelectrodes; nanotechnology; neural nets; recorders; silicon; 100 Hz; Aplysia; DC; DRIE; EB direct writing; FIB; IPSP signal; Pb; Si; electrode impedance; nerve potential base line; neural activity; recording site; silicon based nano lead; single cell recording; submicron scale electrode; Electrodes; Etching; Fabrication; Glass; Lead; Neurons; Resists; Sea measurements; Silicon; Writing;
fLanguage
English
Publisher
ieee
Conference_Titel
Micro Electro Mechanical Systems, 2005. MEMS 2005. 18th IEEE International Conference on
ISSN
1084-6999
Print_ISBN
0-7803-8732-5
Type
conf
DOI
10.1109/MEMSYS.2005.1454042
Filename
1454042
Link To Document