Localized charge injection through the gate oxide over gate-drain overlap region: mechanism, device dependence, and application for device diagnostics

Author

Brozek, T. ; Sridharan, A. ; Werking, J. ; Chan, Y.D. ; Viswanathan, C.R.

Author_Institution

Dept. of Electr. Eng., California Univ., Los Angeles, CA, USA

fYear

1996

fDate

8-11 Dec. 1996

Firstpage

869

Lastpage

872

Abstract

The paper presents a study of localized charge injection through the gate oxide in MOS transistors with 4.5-13 nm thick oxides and its application for device diagnostics. The injection, localized over a gate/drain overlap, is investigated in a high-field GIDL (Gate-Induced Drain Leakage) regime in both NMOS and PMOS devices and is found to be a suitable diagnostic tool for monitoring one of the many process-dependent parameters-the thickness of the gate oxide at the gate edge. Correlation between edge oxide thickening, plasma edge damage, and the performance and reliability of CMOS devices is presented.

Keywords

MOSFET; CMOS device; MOS transistor; NMOS device; PMOS device; device diagnostics; edge oxide thickness; gate oxide; gate-drain overlap; high-field gate-induced drain leakage; localized charge injection; plasma edge damage; CMOS logic circuits; Hot carriers; MOS devices; MOSFETs; Monitoring; Plasma applications; Plasma devices; Plasma diagnostics; Plasma sources; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1996. IEDM '96., International

Conference_Location

San Francisco, CA, USA

ISSN

0163-1918

Print_ISBN

0-7803-3393-4

Type

conf

DOI

10.1109/IEDM.1996.554117

Filename

554117