Title :
Transport models for advanced device simulation-truth or consequences?
Author :
Laux, S.E. ; Fischetti, M.V.
Author_Institution :
Div. of Res., IBM Thomas J. Watson Res. Center, Yorktown Heights, NY, USA
Abstract :
An overview of three methods currently employed in advanced semiconductor device simulation is given, together with results for a model n+-n-n+ structure. The Monte Carlo, energy transport and spherical harmonic expansion methods are discussed from the perspective of a Monte Carlo enthusiast
Keywords :
Monte Carlo methods; carrier mobility; harmonic analysis; semiconductor device models; Monte Carlo method; carrier transport models; energy transport method; model n+-n-n+ structure; semiconductor device simulation; spherical harmonic expansion method; Computer industry; High definition video; Matter waves; Monte Carlo methods; Particle scattering; Physics; Semiconductor device modeling; Semiconductor devices; Silicon; Voltage;
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology Meeting, 1995., Proceedings of the 1995
Conference_Location :
Minneapolis, MN
Print_ISBN :
0-7803-2778-0
DOI :
10.1109/BIPOL.1995.493859
