Title :
Improved collector transit time with ballistic pipi-structure in the npn-AlGaAs/GaAs HBT
Author :
Kim, D.M. ; Song, S.H.
Author_Institution :
Dept. of Electron. Eng., Kookmin Univ., Seoul, South Korea
Abstract :
In this paper, we propose an improved npn-HBT with pipi-doping collector structure maximally utilizing ballistic transport property with modified electric field distribution in the collector-base space charge region. With pipi-HBT, we obtained significant reduction of τ scr compared with those of previously reported conventional and ballistic collector structure HBTs
Keywords :
III-V semiconductors; aluminium compounds; doping profiles; gallium arsenide; heavily doped semiconductors; heterojunction bipolar transistors; semiconductor device models; semiconductor doping; space-charge-limited conduction; AlGaAs-GaAs; ballistic pipi-structure; ballistic transport property; collector transit time; collector-base space charge region; electric field distribution; npn-HBT; pipi-doping collector structure; Ballistic transport; Cutoff frequency; Doping; Electron emission; Gallium arsenide; HEMTs; Heterojunction bipolar transistors; Microwave integrated circuits; Millimeter wave technology; Space charge;
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology Meeting, 1995., Proceedings of the 1995
Conference_Location :
Minneapolis, MN
Print_ISBN :
0-7803-2778-0
DOI :
10.1109/BIPOL.1995.493861
