Title :
Hot-carrier effects in deep submicron thin film SOI MOSFETs
Author :
Renn, S.H. ; Pelloie, J.L. ; Balestra, F.
Author_Institution :
CNRS, Grenoble, France
Abstract :
Hot-carrier effects are thoroughly investigated in deep submicron N- and P-channel SOI MOSFETs, for gate lengths down to sub-0.1 /spl mu/m. Three main types of hot-carrier injections (maximum gate current, maximum substrate current and parasitic bipolar transistor action) are studied. A reliable lifetime prediction is proposed using accurate time-dependent laws for both N- and P-channel SOI MOSFETs.
Keywords :
MOSFET; hot carriers; semiconductor device reliability; silicon-on-insulator; thin film transistors; 0.1 micron; N-channel SOI MOSFET; P-channel SOI MOSFET; Si; deep submicron SOI MOSFETs; hot-carrier injection; maximum gate current; maximum substrate current; parasitic bipolar transistor action; reliable lifetime prediction; thin film SOI MOSFETs; time-dependent laws; Aging; Bipolar transistors; Degradation; Electromagnetic scattering; Hot carrier effects; MOS devices; MOSFET circuits; Stress; Threshold voltage; Transconductance;
Conference_Titel :
Electron Devices Meeting, 1996. IEDM '96., International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-3393-4
DOI :
10.1109/IEDM.1996.554119
