Title :
Behaviour of IGBT modules in zero-voltage-switch applications
Author :
Heumann, K. ; Keller, Ch ; Sommer, R.
Author_Institution :
Inst. fur Allgemaine Elektrotechnik, Tech. Univ., Berlin, Germany
fDate :
29 Jun-3 Jul 1992
Abstract :
A zero-voltage switching (ZVS) test circuit for power semiconductor devices in which these devices are stressed in a similar way as in a resonant DC link inverter is presented. Different types of 50 A insulated gate bipolar transistor (IGBT) modules (fast switching type and low saturation type) were investigated under hard switching and soft switching conditions. The turn-off behaviour and the power dissipated in the modules were measured using different resonant frequencies in the ZVS test circuit. By using ZVS, the switching energy can be reduced by a factor of approximately 9 for the fast switching device and by a factor of approximately 6 for the low saturation device compared to the hard-switched case
Keywords :
insulated gate bipolar transistors; invertors; power transistors; semiconductor device testing; switching circuits; 50 A; IGBT; ZVS; hard switching; insulated gate bipolar transistor; inverter; power semiconductor devices; power transistors; soft switching; turn-off behaviour; zero-voltage switching; Circuit testing; Insulated gate bipolar transistors; Inverters; Power measurement; Power semiconductor devices; Power semiconductor switches; RLC circuits; Resonance; Semiconductor device testing; Zero voltage switching;
Conference_Titel :
Power Electronics Specialists Conference, 1992. PESC '92 Record., 23rd Annual IEEE
Conference_Location :
Toledo
Print_ISBN :
0-7803-0695-3
DOI :
10.1109/PESC.1992.254686
