Title :
Vertical mirrors fabricated by reactive ion etching for fiber optical switching applications
Author :
Marxer, C. ; Grétillat, M.A. ; de Rooij, N.F. ; Bättig, R. ; Anthamatten, O. ; Valk, B. ; Vogel, P.
Author_Institution :
Inst. of Microtechnol., Neuchatel Univ., Switzerland
Abstract :
We report on vertical mirrors fabricated by deep reactive ion etching of silicon. In view of their application in fiber optical switches the mirror height is 75 μm. So the mirror covers well the fiber core of a single mode fiber, when the fiber is placed in a groove of the same depth and etched at the same time as the mirror. A minimal mirror thickness of 2.3 μm was achieved, resulting in an aspect ratio over thirty. The verticality was better than 89.3°. The surface roughness of the etched surface is 36 nm rms. For an increased reflectivity the silicon mirrors are coated with aluminium. Their reflectivity was measured to be 76%. To obtain an uniform etch depth, etching is stopped on a buried oxide layer. This allows to integrate at the same time mirrors with suspension and actuation structures as well as fiber-alignment grooves in one processing step. Using this technology we have fabricated a fiber optical switch with promising performance: The coupling loss in the OFF position is 2.5 dB and 4 dB in the ON position. The switching time is below 0.2 ms
Keywords :
elemental semiconductors; integrated optics; mirrors; optical fibres; optical switches; reflectivity; silicon; sputter etching; surface topography; 0.2 ms; 2.3 mum; Al coating; Si; Si mirror; SiAl; actuation structures; buried oxide layer; coupling loss; etching; fiber optical switch; fiber optical switching; fiber-alignment grooves; reactive ion etching; reflectivity; surface roughness; suspension; switching time; vertical mirrors; verticality; Aluminum; Etching; Mirrors; Optical fibers; Optical switches; Performance loss; Reflectivity; Rough surfaces; Silicon; Surface roughness;
Conference_Titel :
Micro Electro Mechanical Systems, 1997. MEMS '97, Proceedings, IEEE., Tenth Annual International Workshop on
Conference_Location :
Nagoya
Print_ISBN :
0-7803-3744-1
DOI :
10.1109/MEMSYS.1997.581764