Title :
Three level IGBT inverter
Author :
Tadros, Y. ; Salama, Sana ; Höf, R.
Author_Institution :
AEG Aktiengesellschaft, Inst. of Drive Syst. & Power Electron., Berlin, Germany
fDate :
29 Jun-3 Jul 1992
Abstract :
To extend the application of insulated gate bipolar transistor (IGBT) inverters in motor drives to higher voltages, a three-level IGBT inverter has been developed. The power circuit realized and a pulse pattern generator with space voltage modulation are described. A method to control the middle point potential is suggested. The three-level IGBT inverter can be applied to industrial drives with a three-phase supply voltage of 660 V and drives for local traffic with DC line voltage of 600-750 V
Keywords :
electric drives; electric motors; insulated gate bipolar transistors; invertors; power transistors; pulse generators; 600 to 750 V; 660 V; IGBT inverter; middle point potential; motor drives; power transistors; pulse pattern generator; space voltage modulation; three-phase; Circuits; Clamps; Diodes; Harmonic distortion; Insulated gate bipolar transistors; Pulse width modulation inverters; Switches; Switching frequency; Voltage control; Zero voltage switching;
Conference_Titel :
Power Electronics Specialists Conference, 1992. PESC '92 Record., 23rd Annual IEEE
Conference_Location :
Toledo
Print_ISBN :
0-7803-0695-3
DOI :
10.1109/PESC.1992.254689
