DocumentCode :
34267
Title :
The Manipulation of Temperature Coefficient Resistance of TaN Thin-Film Resistor by Supercritical CO2 Fluid
Author :
Huey-Ru Chen ; Ying-Chung Chen ; Ting-Chang Chang ; Kuan-Chang Chang ; Tsung-Ming Tsai ; Tian-Jian Chu ; Chih-Cheng Shih ; Yi-Ting Tseng ; Chih-Yang Lin ; Hua-Ching Lin
Author_Institution :
Dept. of Electr. Eng., Nat. Sun Yat-Sen Univ., Kaohsiung, Taiwan
Volume :
36
Issue :
3
fYear :
2015
fDate :
Mar-15
Firstpage :
271
Lastpage :
273
Abstract :
The manipulation of temperature coefficient of resistance (TCR) in TaN thin-film resistor (TFR) was demonstrated by electrical measurement and analysis through supercritical carbon dioxide (SCCO2) fluid treatment for the first time. The negative TCR value of TaN TFR changes to positive TCR value through annealing process due to the growth and merge of TaNx grain. After SCCO2 treatment, the positive TCR value was changed back to negative TCR value in TaN TFR. The TaN grain boundary isolated by dehydroxyl effect of SCCO2 fluid treatment causes the current conduction mechanism changed to hopping conduction from ohmic conduction.
Keywords :
annealing; carbon compounds; tantalum compounds; thin film resistors; CO2; TaNx; annealing process; dehydroxyl effect; grain boundary; hopping conduction; negative TCR value; ohmic conduction; positive TCR value; supercritical fluid treatment; temperature coefficient resistance; thin-film resistor; Annealing; Films; Fluids; Grain boundaries; Resistance; Resistors; Temperature measurement; SCCO2; TaN; temperature coefficient resistance; thin film resistor;
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/LED.2015.2396196
Filename :
7018922
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=34267
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