• DocumentCode
    34267
  • Title

    The Manipulation of Temperature Coefficient Resistance of TaN Thin-Film Resistor by Supercritical CO2 Fluid

  • Author

    Huey-Ru Chen ; Ying-Chung Chen ; Ting-Chang Chang ; Kuan-Chang Chang ; Tsung-Ming Tsai ; Tian-Jian Chu ; Chih-Cheng Shih ; Yi-Ting Tseng ; Chih-Yang Lin ; Hua-Ching Lin

  • Author_Institution
    Dept. of Electr. Eng., Nat. Sun Yat-Sen Univ., Kaohsiung, Taiwan
  • Volume
    36
  • Issue
    3
  • fYear
    2015
  • fDate
    Mar-15
  • Firstpage
    271
  • Lastpage
    273
  • Abstract
    The manipulation of temperature coefficient of resistance (TCR) in TaN thin-film resistor (TFR) was demonstrated by electrical measurement and analysis through supercritical carbon dioxide (SCCO2) fluid treatment for the first time. The negative TCR value of TaN TFR changes to positive TCR value through annealing process due to the growth and merge of TaNx grain. After SCCO2 treatment, the positive TCR value was changed back to negative TCR value in TaN TFR. The TaN grain boundary isolated by dehydroxyl effect of SCCO2 fluid treatment causes the current conduction mechanism changed to hopping conduction from ohmic conduction.
  • Keywords
    annealing; carbon compounds; tantalum compounds; thin film resistors; CO2; TaNx; annealing process; dehydroxyl effect; grain boundary; hopping conduction; negative TCR value; ohmic conduction; positive TCR value; supercritical fluid treatment; temperature coefficient resistance; thin-film resistor; Annealing; Films; Fluids; Grain boundaries; Resistance; Resistors; Temperature measurement; SCCO2; TaN; temperature coefficient resistance; thin film resistor;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/LED.2015.2396196
  • Filename
    7018922
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=34267