Title :
Predictive modelling of lateral scaling in bipolar transistors
Author :
Walkey, D.J. ; Schröter, M. ; Voinigescu, S.
Author_Institution :
Dept. of Electron., Carleton Univ., Ottawa, Ont., Canada
Abstract :
A new approach for modelling the dependence of bipolar transistor characteristics on emitter width and length is presented. The new model, verified by device simulation and measurement, predicts device behavior accurately over a wide range of emitter aspect ratios
Keywords :
bipolar transistors; current density; semiconductor device models; bipolar transistors; emitter aspect ratios; emitter length; emitter width; lateral scaling; predictive modelling; transistor characteristics dependence; Bipolar transistors; Capacitance; Circuit testing; Current density; Design optimization; Equivalent circuits; Frequency; Predictive models; Solid modeling; Telecommunications;
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology Meeting, 1995., Proceedings of the 1995
Conference_Location :
Minneapolis, MN
Print_ISBN :
0-7803-2778-0
DOI :
10.1109/BIPOL.1995.493870
