DocumentCode
3426712
Title
Predictive modelling of lateral scaling in bipolar transistors
Author
Walkey, D.J. ; Schröter, M. ; Voinigescu, S.
Author_Institution
Dept. of Electron., Carleton Univ., Ottawa, Ont., Canada
fYear
1995
fDate
2-3 Oct 1995
Firstpage
74
Lastpage
77
Abstract
A new approach for modelling the dependence of bipolar transistor characteristics on emitter width and length is presented. The new model, verified by device simulation and measurement, predicts device behavior accurately over a wide range of emitter aspect ratios
Keywords
bipolar transistors; current density; semiconductor device models; bipolar transistors; emitter aspect ratios; emitter length; emitter width; lateral scaling; predictive modelling; transistor characteristics dependence; Bipolar transistors; Capacitance; Circuit testing; Current density; Design optimization; Equivalent circuits; Frequency; Predictive models; Solid modeling; Telecommunications;
fLanguage
English
Publisher
ieee
Conference_Titel
Bipolar/BiCMOS Circuits and Technology Meeting, 1995., Proceedings of the 1995
Conference_Location
Minneapolis, MN
Print_ISBN
0-7803-2778-0
Type
conf
DOI
10.1109/BIPOL.1995.493870
Filename
493870
Link To Document