Influence of annealing treatment on the ferroelectric and piezoelectric properties of PZT thin films grown on silicon substrates by sputtering

Author

Velu, G. ; Remiens, D. ; Tronc, P. ; Cattan, E. ; Thierry, B.

Author_Institution

CRITT, Univ. de Valanciennes et du Hainaut, Maubeuge, France

Volume

1

fYear

1996

fDate

18-21 Aug 1996

Firstpage

503

Abstract

The influence of growth conditions and post-annealing treatment on rf-magnetron sputtered lead zirconate titanate (PZT) thin films has been investigated, and the structural, microstructural and electrical properties have been examined. Perovskite structure was obtained by conventional annealing as well as by Rapid Thermal Annealing (RTA). The structure and the microstructure of the films are directly related to the thermal process. The films were dense and crack-free. The ferroelectric properties and the fatigue are very sensitive to the annealing treatment. The piezoelectric properties of PZT films have been evaluated by the embedded beam method. The results show that PZT films grown by sputtering can be used to realize micro-actuators/sensors devices on silicon substrates

Keywords

annealing; fatigue; ferroelectric devices; ferroelectric thin films; lead compounds; microactuators; microsensors; piezoceramics; rapid thermal annealing; sputter deposition; PZT-Si; PbZrO3TiO3-Si; RF-magnetron sputtering; Si; annealing treatment; embedded beam method; fatigue; ferroelectric properties; microactuators; microsensors; perovskite structure; piezoelectric properties; post-annealing treatment; rapid thermal annealing; Fatigue; Ferroelectric films; Ferroelectric materials; Microstructure; Piezoelectric films; Rapid thermal annealing; Rapid thermal processing; Semiconductor films; Sputtering; Titanium compounds;

fLanguage

English

Publisher

ieee

Conference_Titel

Applications of Ferroelectrics, 1996. ISAF '96., Proceedings of the Tenth IEEE International Symposium on

Conference_Location

East Brunswick, NJ

Print_ISBN

0-7803-3355-1

Type

conf

DOI

10.1109/ISAF.1996.602799

Filename

602799