Title :
A new method to fabricate metal tips for scanning probe microscopy
Author :
Yagi, Takayuki ; Shimada, Yasuhiro ; Ikeda, Tsutomu ; Takamatsu, Osamu ; Matsuda, Hiroshi ; Takimoto, Kiyoshi ; Hirai, Yutaka
Author_Institution :
Res. Center, Canon Inc., Kanagawa, Japan
Abstract :
A new method to fabricate sharp metal tips on cantilevers for a scanning probe microscope (SPM) is presented in this paper. The metal tip film, which is and patterned on a silicon mold with etch pits, is attached by metal-to-metal bonding to a metal pad on a cantilever. Then a tip is fabricated on the cantilever by peeling the metal tip film off the mold at room temperature. Because the back side of the metal tip film becomes the tip surface, the tip surface is very smooth without grain boundaries associated with deposited thin films. A platinum tip with a radius curvature of less than 15 nm was successfully fabricated. In addition, the mold can be reused because the silicon mold is not dissolved during the tip fabrication. By applying this method in which the tip fabrication process is independent of the cantilever process, we succeeded to form a tip on various cantilevers. Moreover, we used the cantilever with the tip in a piezoresistive atomic force microscope and an atomic force microscope combined with a scanning tunneling microscope (AFM/STM) apparatus and obtained simultaneously high resolution topography and surface conductance images of a sample surface
Keywords :
atomic force microscopy; integrated circuit technology; microactuators; piezoresistive devices; platinum; scanning probe microscopy; scanning tunnelling microscopy; semiconductor device metallisation; semiconductor technology; silicon; surface conductivity; surface phenomena; surface topography; AFM/STM; Pt tip; Si; Si mold; Si-Pt; atomic force microscope; cantilever; cantilevers; deposited thin films; etch pits; grain boundaries; high resolution topography; information storage; metal pad; metal tips; metal-to-metal bonding; piezoresistive atomic force microscope; radius curvature; scanning probe microscopy; scanning tunneling microscope; surface conductance images; tip surface; Atomic force microscopy; Bonding; Etching; Fabrication; Grain boundaries; Scanning probe microscopy; Semiconductor films; Silicon; Surface topography; Temperature;
Conference_Titel :
Micro Electro Mechanical Systems, 1997. MEMS '97, Proceedings, IEEE., Tenth Annual International Workshop on
Conference_Location :
Nagoya
Print_ISBN :
0-7803-3744-1
DOI :
10.1109/MEMSYS.1997.581785