Title :
A self-aligned SiGe base bipolar technology using cold wall UHV/CVD and its application to optical communication ICs
Author :
Sato, Fumihiko ; Hashimoto, Takasuke ; Tatsumi, Toru ; Soda, Masaaki ; Tezuka, Hiroshi ; Suzaki, Tetsuyuki ; Tashiro, Tsutomu
Author_Institution :
ULSI Device Dev. Labs., NEC Corp., Kanagawa, Japan
Abstract :
A self-aligned SiGe base bipolar technology and its application to optical communication ICs are presented. Using cold wall ultra-high vacuum (UHV)/CVD technology, a self-aligned selective SiGe/Si epitaxial growth can be realized for the overhanging structure of the base electrode polysilicon. This is a novel self-aligned bipolar transistor, which we call a super self-aligned selectively grown SiGe base (SSSB) bipolar transistor. The maximum cut-off frequency fT of 60 GHz and the maximum frequency of operation fmax of 50 GHz have been obtained. This technology has been applied to optical communication ICs. A receiver and a transmitter ICs fabricated on a silicon on insulator (SOI) substrate stably operate at up to 20 Gb/s
Keywords :
Ge-Si alloys; bipolar digital integrated circuits; integrated circuit technology; optical receivers; optical transmitters; semiconductor growth; silicon-on-insulator; vapour phase epitaxial growth; 20 Gbit/s; 50 GHz; 60 GHz; SOI substrate; Si; SiGe-Si; base electrode polysilicon; bipolar IC technology; cold wall UHV/CVD; optical communication IC; overhanging structure; receiver IC; selective SiGe/Si epitaxial growth; self-aligned bipolar transistor; super self-aligned selectively grown SiGe base; transmitter IC; ultra-high vacuum CVD; Bipolar transistors; Cutoff frequency; Electrodes; Epitaxial growth; Germanium silicon alloys; Optical fiber communication; Optical receivers; Silicon germanium; Silicon on insulator technology; Vacuum technology;
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology Meeting, 1995., Proceedings of the 1995
Conference_Location :
Minneapolis, MN
Print_ISBN :
0-7803-2778-0
DOI :
10.1109/BIPOL.1995.493872
