Title :
An FT-CCD imager with true 2.4/spl times/2.4 /spl mu/m/sup 2/ pixels in double membrane poly-Si technology
Author :
Peek, H.L. ; Verbugt, D.W. ; Beenhakkers, M.J. ; Huinink, W.F. ; Kleimann, K.C.
Author_Institution :
Philips Imaging Technol., Eindhoven, Netherlands
Abstract :
A 300 k-pixel frame-transfer image sensor ( 1/8 " optical format), with a pixel size of 2.4/spl times/2.4 /spl mu/m/sup 2/, the smallest ever published, is reported. This sensor follows the "VGA" standard (640/spl times/480 progressive scan, 60 fr./sec) and uses the following key processing technologies: only two, very thin ("membrane") poly-Si layers for gate electrodes; a modified Ti/TiN/W shunt-wiring technology; optimized process for narrow channel stops (1 /spl mu/m); optimized 0.2 /spl mu/m contact-hole technology in standard I-line photolithography; peristaltic-profiled doping for the buried CCD channel.
Keywords :
CCD image sensors; doping profiles; integrated circuit metallisation; integrated circuit technology; membranes; silicon; 3E5 pixel; 480 pixel; 640 pixel; FT-CCD imager; Si; Ti-TiN-W; VGA standard; buried CCD channel; contact-hole technology; double membrane poly-Si technology; frame-transfer image sensor; gate electrodes; modified Ti/TiN/W shunt-wiring technology; narrow channel stops; peristaltic-profiled doping; standard I-line photolithography; Biomembranes; Charge coupled devices; Dielectrics; Electrodes; Etching; Image sensors; Pixel; Tin; Tungsten; Wiring;
Conference_Titel :
Electron Devices Meeting, 1996. IEDM '96., International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-3393-4
DOI :
10.1109/IEDM.1996.554126
