Low-frequency noise in UHV/CVD Si- and SiGe-base bipolar transistors

Author

Vempati, Lakshmi S. ; Cressler, John D. ; Babcock, Jeffrey A. ; Jaeger, Richard C. ; Harame, David L.

Author_Institution

Alabama Microelectron. Sci. & Technol. Center, Auburn Univ., AL, USA

fYear

1995

fDate

2-3 Oct 1995

Firstpage

129

Lastpage

132

Abstract

In this work we present the first comprehensive investigation of the low-frequency noise characteristics of an advanced epitaxial Si- and SiGe-base bipolar technology grown by the UHV/CVD technique. The magnitude of the 1/f noise is comparable for SiGe HBTs and Si BJTs for identical bias, geometry, and temperature, indicating that the use of thermodynamically stable SiGe strained-layers does not degrade transistor noise performance. In some of the Si and SiGe samples we have observed random telegraph signals (RTS) associated with excess generation-recombination (G/R) noise. Temperature measurements have been made to extract activation energies of the associated G/R centers

Keywords

1/f noise; CVD coatings; Ge-Si alloys; bipolar transistors; heterojunction bipolar transistors; semiconductor device noise; silicon; 1/f noise; Si; Si BJTs; SiGe; SiGe HBTs; UHV/CVD growth; activation energies; bipolar transistors; epitaxial base technology; generation-recombination noise; low-frequency noise; random telegraph signals; strained layers; temperature dependence; Degradation; Geometry; Germanium silicon alloys; Low-frequency noise; Noise generators; Signal generators; Silicon germanium; Telegraphy; Temperature; Transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

Bipolar/BiCMOS Circuits and Technology Meeting, 1995., Proceedings of the 1995

Conference_Location

Minneapolis, MN

Print_ISBN

0-7803-2778-0

Type

conf

DOI

10.1109/BIPOL.1995.493881

Filename

493881