A 200/spl times/200 CCD image sensor fabricated on high-resistivity silicon

Author

Holland, S.E. ; Goldhaber, G. ; Groom, D.E. ; Moses, W.W. ; Pennypacker, C.R. ; Perlmutter, S. ; Wang, N.W. ; Stover, R.J. ; Wei, M.

Author_Institution

Lawrence Berkeley Lab., CA, USA

fYear

1996

fDate

8-11 Dec. 1996

Firstpage

911

Lastpage

914

Abstract

A charge coupled device (CCD) image sensor fabricated on high-resistivity silicon is described. The resistivity, about 10,000 /spl Omega/-cm, allows for operation of the CCD with the entire 300 /spl mu/m substrate depleted. This results in better red to near infrared response when compared to conventional and thinned CCDs. In addition the CCD has good blue response when back illuminated. Since the substrate is fully depleted, thinning, with its inherent difficulties, is not necessary in order to enhance blue response.

Keywords

CCD image sensors; electrical conductivity; integrated circuit technology; silicon; 10000 ohmcm; 200 pixel; 300 micron; 4E4 pixel; CCD image sensor; Si; back illumination; blue response; charge coupled device imager; fully depleted substrate; high-resistivity Si; near infrared response; Charge coupled devices; Charge-coupled image sensors; Conductivity; Detectors; Fabrication; Observatories; Physics; Potential well; Silicon; Surface waves;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1996. IEDM '96., International

Conference_Location

San Francisco, CA, USA

ISSN

0163-1918

Print_ISBN

0-7803-3393-4

Type

conf

DOI

10.1109/IEDM.1996.554127

Filename

554127