Temperature compensation electronics for ISFET readout applications

Author

Chung, Wen-Yaw ; Yang, Chung-Huung ; Wang, Ming-Chia ; Pijanowska, Dorota G. ; Torbicz, Wradyslaw

Author_Institution

Dept. of Electron. Eng., Chung Yuan Christian Univ., Chung-li, Taiwan

fYear

2004

fDate

1-3 Dec. 2004

Abstract

This paper presents temperature compensation electronics for ion sensitive field effect transistor (ISFET) sensors. It consists of a bridge-type floating-source ion sensing circuit and a VT extractor centigrade temperature sensor accompanied with a temperature coefficient (TCF) cancellation method. Using LabVlEW packages has developed an extended measurement system including compensation algorithms programming. Experimental results show that the temperature dependence of the Si₃N₄-gate ISFET sensor improved from 8mV/°C to near 0mV/°C with the proposed temperature compensation circuitry. This system allows a wide range of high accurate pH-level measurements. The method of temperature compensation may also be valid for other biosensors or bioFETs.

Keywords

biomedical engineering; chemical sensors; compensation; ion sensitive field effect transistors; pH measurement; readout electronics; silicon compounds; ISFET readout applications; LabVlEW packages; Si₃N₄; VT extractor centigrade temperature sensor; bridge-type floating-source ion sensing circuit; ion sensitive field effect transistor sensors; temperature coefficient cancellation; temperature compensation electronics; Biomedical engineering; Biomedical measurements; Biosensors; Circuits; Data acquisition; Data mining; Diodes; Temperature dependence; Temperature sensors; Threshold voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Biomedical Circuits and Systems, 2004 IEEE International Workshop on

Print_ISBN

0-7803-8665-5

Type

conf

DOI

10.1109/BIOCAS.2004.1454158

Filename

1454158