• DocumentCode
    3427755
  • Title

    A 1.0 μm linear BiCMOS technology with power DMOS capability

  • Author

    Bayer, Erich ; Bucksch, Walter ; Scoones, Kevin ; Wagensohner, K. ; Erdeljac, John ; Hutter, Louis

  • Author_Institution
    Texas Instrum. Deutschland GmbH, Freising, Germany
  • fYear
    1995
  • fDate
    2-3 Oct 1995
  • Firstpage
    137
  • Lastpage
    141
  • Abstract
    A 1.0 micron BiCMOS process, with lateral DMOS as an available process extension, is presented for mixed-signal and power applications, providing a broad range of active and passive components. The DMOS transistor offers 45-60 V capability with Rsp=1.25 mΩ.cm2 . The process has been used to build a 5A H-Bridge for automotive applications, the design of which is described in detail
  • Keywords
    BiCMOS analogue integrated circuits; automotive electronics; bridge circuits; integrated circuit technology; mixed analogue-digital integrated circuits; power integrated circuits; 1.0 micron; 45 to 60 V; 5 A; H-Bridge; active components; automotive applications; lateral DMOS power transistor; linear BiCMOS technology; mixed-signal IC; passive components; BiCMOS integrated circuits; CMOS logic circuits; CMOS process; CMOS technology; Costs; Electric resistance; Logic devices; MOS devices; Performance gain; Power transistors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Bipolar/BiCMOS Circuits and Technology Meeting, 1995., Proceedings of the 1995
  • Conference_Location
    Minneapolis, MN
  • Print_ISBN
    0-7803-2778-0
  • Type

    conf

  • DOI
    10.1109/BIPOL.1995.493883
  • Filename
    493883
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3427755