Trajectory morphing applied to epitaxial thin film growth

Author

Engelmann, A.P. ; Meyer, David G. ; Hauser, John ; Caflisch, Russell

Author_Institution

Dept. of Electr. & Comput. Eng., Colorado Univ., Boulder, CO, USA

Volume

5

fYear

1999

fDate

1999

Firstpage

3589

Abstract

Several recent developments have made it possible to begin exploring in formal ways the trajectory space of epitaxial growth during molecular beam epitaxy. This paper reviews the fundamentals of trajectory morphing and presents results showing that trajectory morphing may be used to explore the trajectory space of an epitaxial thin film growth system. We have derived a simplified growth model, suitable for use in morphing, and this is also presented. are reviewed

Keywords

differential equations; feedback; linear quadratic control; mathematical morphology; molecular beam epitaxial growth; nonlinear systems; optimisation; simulation; tracking; differential equations; epitaxial thin film growth; feedback; growth model; homotopy; linear quadratic control; molecular beam epitaxy; nonlinear systems; optimisation; tracking; trajectory morphing; trajectory space; Atomic layer deposition; Epitaxial growth; Molecular beam epitaxial growth; Semiconductor materials; Semiconductor process modeling; Semiconductor thin films; Space exploration; Substrates; Temperature; Transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

American Control Conference, 1999. Proceedings of the 1999

Conference_Location

San Diego, CA

ISSN

0743-1619

Print_ISBN

0-7803-4990-3

Type

conf

DOI

10.1109/ACC.1999.782435

Filename

782435