DocumentCode
3427767
Title
A CMOS-compatible device for fluid density measurements
Author
Westberg, David ; Paul, Oliver ; Andersson, Gert I. ; Baltes, Henry
Author_Institution
Dept. of Solid State Electron., Chalmers Univ. of Technol., Goteborg, Sweden
fYear
1997
fDate
26-30 Jan 1997
Firstpage
278
Lastpage
283
Abstract
We report a miniaturized CMOS-compatible resonant sensor to measure the density of fluids. The device is fabricated using a standard CMOS process followed by simple postprocessing combining both sacrificial aluminium etching and bulk silicon micromachining. The size of the active part of the sensor is only 250×250 μm2. This makes the device suitable for batch fabrication or as a component of a larger CMOS-compatible fluid handling system. The volume of the probed liquid is only 1.1×10-11 l. A measurement setup that completely eliminates capacitive crosstalk between the thermomechanical excitation and the piezoresistive detection is reported. The quality factor at atmospheric pressure is typically 215. The measured frequency shift of 6 kHz/gcm-3 of the device agrees well with finite element simulations and analytical approximations
Keywords
CMOS integrated circuits; Q-factor; aluminium; circuit resonance; density measurement; electric sensing devices; elemental semiconductors; etching; finite element analysis; microsensors; silicon; 250 mum; Al; Si; aluminium etching; analytical approximations; batch fabrication; capacitive crosstalk; density of fluids; finite element simulation; fluid density measurement; frequency shift; miniaturized CMOS-compatible resonant sensor; piezoresistive detection; postprocessing; quality factor; silicon micromachining; standard CMOS process; thermomechanical excitation; Aluminum; Atmospheric measurements; CMOS process; Crosstalk; Density measurement; Etching; Fabrication; Micromachining; Resonance; Silicon;
fLanguage
English
Publisher
ieee
Conference_Titel
Micro Electro Mechanical Systems, 1997. MEMS '97, Proceedings, IEEE., Tenth Annual International Workshop on
Conference_Location
Nagoya
ISSN
1084-6999
Print_ISBN
0-7803-3744-1
Type
conf
DOI
10.1109/MEMSYS.1997.581826
Filename
581826
Link To Document