DocumentCode :
342777
Title :
Locating sensitivity minimizing process inputs in the plasma enhanced chemical vapor deposition (PECVD) of silicon nitride thin films: a neural network based approach
Author :
Rosen, I.G. ; Parent, T. ; Cooper, C. ; Chen, P. ; Madhular, A.
Author_Institution :
Center for the Intelligent Manuf. of Semicond., Univ. of Southern California, Los Angeles, CA, USA
Volume :
5
fYear :
1999
fDate :
1999
Firstpage :
3594
Abstract :
We consider the problem of locating a process recipe that produces outputs which are least sensitive to small fluctuations in the process condition. A sensitivity functional describing the relationship between the inputs and outputs and their localized variability is defined using feedforward artificial neural network response surfaces. The most robust process recipe is formulated as a minimization problem. Numerical findings are presented for the problem of finding the most robust process recipe for the plasma enhanced chemical vapor deposition of silicon nitride thin films having a specified refractive index
Keywords :
feedforward neural nets; neurocontrollers; plasma CVD; process control; refractive index; sensitivity analysis; thin film devices; GaAs; SiN; chemical vapor deposition; feedforward neural network; minimization; plasma enhanced CVD; process control; process recipe; refractive index; sensitivity analysis; silicon nitride thin films; Artificial neural networks; Chemical vapor deposition; Fluctuations; Plasma chemistry; Refractive index; Response surface methodology; Robustness; Semiconductor thin films; Silicon; Sputtering;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
American Control Conference, 1999. Proceedings of the 1999
Conference_Location :
San Diego, CA
ISSN :
0743-1619
Print_ISBN :
0-7803-4990-3
Type :
conf
DOI :
10.1109/ACC.1999.782436
Filename :
782436
Link To Document :
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