• DocumentCode
    3427810
  • Title

    Scaleability of DC/AC non-linear dispersion models for microwave FETs

  • Author

    Cojocaru, V.I. ; Brazil, T.J.

  • Author_Institution
    Dept. of Electron. & Electr. Eng., Univ. Coll. Dublin, Ireland
  • Volume
    2
  • fYear
    1997
  • fDate
    8-13 June 1997
  • Firstpage
    387
  • Abstract
    This paper addresses the issue of scaleability in circuit based models for FETs, emphasising for the first time the particularly difficult problems associated with the scaleability of DC/AC dispersion phenomena. Results of a study carried out on both MESFET and PHEMT foundry processes, show that while the differential DC/AC transconductance obeys straightforward scaling rules, the output conductance does not. An equivalent circuit based solution that incorporates a differential DC/AC dispersion modelling methodology is presented. The solution is compact, obeys the required conservation constraints and can account for the scaling inconsistencies observed in the output conductance.
  • Keywords
    Schottky gate field effect transistors; equivalent circuits; high electron mobility transistors; microwave field effect transistors; semiconductor device models; DC/AC nonlinear dispersion model; MESFET; PHEMT; conservation; equivalent circuit; foundry process; microwave FET; output conductance; scaleability; transconductance; Circuit testing; Design engineering; Equivalent circuits; Foundries; MESFETs; MMICs; Microwave FETs; PHEMTs; Solid modeling; Transconductance;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Symposium Digest, 1997., IEEE MTT-S International
  • Conference_Location
    Denver, CO, USA
  • ISSN
    0149-645X
  • Print_ISBN
    0-7803-3814-6
  • Type

    conf

  • DOI
    10.1109/MWSYM.1997.602815
  • Filename
    602815