DocumentCode
3427810
Title
Scaleability of DC/AC non-linear dispersion models for microwave FETs
Author
Cojocaru, V.I. ; Brazil, T.J.
Author_Institution
Dept. of Electron. & Electr. Eng., Univ. Coll. Dublin, Ireland
Volume
2
fYear
1997
fDate
8-13 June 1997
Firstpage
387
Abstract
This paper addresses the issue of scaleability in circuit based models for FETs, emphasising for the first time the particularly difficult problems associated with the scaleability of DC/AC dispersion phenomena. Results of a study carried out on both MESFET and PHEMT foundry processes, show that while the differential DC/AC transconductance obeys straightforward scaling rules, the output conductance does not. An equivalent circuit based solution that incorporates a differential DC/AC dispersion modelling methodology is presented. The solution is compact, obeys the required conservation constraints and can account for the scaling inconsistencies observed in the output conductance.
Keywords
Schottky gate field effect transistors; equivalent circuits; high electron mobility transistors; microwave field effect transistors; semiconductor device models; DC/AC nonlinear dispersion model; MESFET; PHEMT; conservation; equivalent circuit; foundry process; microwave FET; output conductance; scaleability; transconductance; Circuit testing; Design engineering; Equivalent circuits; Foundries; MESFETs; MMICs; Microwave FETs; PHEMTs; Solid modeling; Transconductance;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest, 1997., IEEE MTT-S International
Conference_Location
Denver, CO, USA
ISSN
0149-645X
Print_ISBN
0-7803-3814-6
Type
conf
DOI
10.1109/MWSYM.1997.602815
Filename
602815
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