A physical large signal Si MOSFET model for RF circuit design

Author

Ho, M.C. ; Green, K. ; Culbertson, R. ; Yang, J.Y. ; Ladwig, D. ; Ehnis, P.

Author_Institution

Corp. R&D, Texas Instrum. Inc., Dallas, TX, USA

Volume

2

fYear

1997

fDate

8-13 June 1997

Firstpage

391

Abstract

A new physically based Si MOSFET large signal model, BSIM3v3, developed by UC Berkeley, has been evaluated for high-frequency mixed-signal circuit analysis in a frequency domain, harmonic balance simulator. The model is validated using simulated RF power characteristics of automatic load pull measurement at different bias and matching conditions.

Keywords

MOSFET; UHF circuits; UHF field effect transistors; circuit CAD; circuit analysis computing; elemental semiconductors; equivalent circuits; frequency-domain analysis; semiconductor device models; silicon; BSIM3v3 model; HF mixed-signal circuit analysis; RF circuit design; Si; Si MOSFET model; automatic load pull measurement; bias conditions; frequency domain harmonic balance simulator; matching conditions; physical large signal model; simulated RF power characteristics; Circuit simulation; Circuit synthesis; Instruments; MOSFET circuits; Power MOSFET; RF signals; Radio frequency; Resistors; Semiconductor process modeling; Signal processing;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 1997., IEEE MTT-S International

Conference_Location

Denver, CO, USA

ISSN

0149-645X

Print_ISBN

0-7803-3814-6

Type

conf

DOI

10.1109/MWSYM.1997.602816

Filename

602816