Title :
Pull-in time dynamics as a measure of absolute pressure
Author :
Gupta, Raj K. ; Senturia, Stephen D.
Author_Institution :
Microsyst. Technol. Lab., MIT, Cambridge, MA, USA
Abstract :
The squeezed-film damping component of the pull-in time of an electrostatically-actuated micromechanical fixed-fixed beam is shown to be a sensitive, and nearly linear function of ambient air pressure in the measured range of 0.1 mbar to 1013 mbar (1 atm or 760 Torr). Pull-in time simulations, based on a one-dimensional macromodel using a damping constant proportional to pressure, are in good agreement with measured data. The data and simulations show that pull-in type devices will make excellent microelectromechanical systems (MEMS) sensors for broad-range absolute pressure measurements and for in situ leak monitoring of hermetically scaled packages containing other sensors or IC´s. The pull-in sensors are compatible with any MEMS fabrication processes that allow out-of-plane electrostatic actuation, including surface micromachining and silicon wafer-bonding, and they do not require a cavity sealed at vacuum or at a reference air pressure
Keywords :
damping; digital simulation; elemental semiconductors; leak detection; microsensors; pressure measurement; pressure sensors; silicon; simulation; 0.1 to 1013 mbar; MEMS; Si; Si wafer-bonding; absolute pressure; absolute pressure measurement; ambient air pressure; damping constant; electrostatically-actuated micromechanical fixed-fixed beam; hermetically scaled packages; in situ leak monitoring; one-dimensional macromodel; out-of-plane electrostatic actuation; pull-in time dynamics; pull-in time simulation; reference air pressure; squeezed-film damping component; surface micromachining; Damping; Electrostatic measurements; Hermetic seals; Microelectromechanical systems; Micromechanical devices; Monitoring; Packaging; Pressure measurement; Sensor systems; Time measurement;
Conference_Titel :
Micro Electro Mechanical Systems, 1997. MEMS '97, Proceedings, IEEE., Tenth Annual International Workshop on
Conference_Location :
Nagoya
Print_ISBN :
0-7803-3744-1
DOI :
10.1109/MEMSYS.1997.581830