Title :
Megawatt MOS controlled thyristor for high voltage power circuits
Author :
Temple, V.A.K. ; Arthur, Stephen D. ; Watrous, D.L. ; DeDoncker, Rik W. ; Mehta, Harshad
Author_Institution :
Harris Power R&D, Schenectady, NY, USA
fDate :
29 Jun-3 Jul 1992
Abstract :
The authors describes first-generation PMOS-controlled thyristors (P-MCTs) that are fairly mature at 600-1200 V and their first successful 3 kV devices. Single devices are shown operating, in surge, at multimegawatt levels. Modules of parallel or series devices have turned off near megawatt loads. The 3 kV MCT is shown operating in an experimental resonant-type circuit aimed at applications in high-power motor drives
Keywords :
metal-insulator-semiconductor devices; thyristor applications; 3 kV; 600 to 1200 V; PMOS-controlled thyristors; high voltage power circuits; high-power motor drives; multimegawatt levels; parallel devices; resonant-type circuit; series devices; Circuits; FETs; MOSFETs; Physics; Power system reliability; Rivers; Surges; Temperature; Thyristors; Voltage control;
Conference_Titel :
Power Electronics Specialists Conference, 1992. PESC '92 Record., 23rd Annual IEEE
Conference_Location :
Toledo
Print_ISBN :
0-7803-0695-3
DOI :
10.1109/PESC.1992.254772
