DocumentCode :
3427972
Title :
Loss mechanisms in IGBTs under zero voltage switching
Author :
Kurnia, A. ; Stielau, O.H. ; Venkataramanan, G. ; Divan, D.M.
Author_Institution :
Dept. of Electr. & Comput. Eng., Wisconsin Univ., Madison, WI, USA
fYear :
1992
fDate :
29 Jun-3 Jul 1992
Firstpage :
1011
Abstract :
Loss characterization of IGBTs under zero voltage switching conditions is needed to understand operating limits for soft switching converters such as the resonant DC link inverter. Several important loss mechanisms which can be identified include turn-off switching loss due to tail current `bump´, dynamic saturation and snubber dump loss during turn-on, elevated conduction loss due to imperfect conductivity modulation under di/dt conditions snubber dump at device turn-on, loss associated with energy trapped in the device package internal inductance, and losses associated with uneven current distribution within the device. These loss components are quantified, and experimental validation of total device losses is presented
Keywords :
insulated gate bipolar transistors; invertors; loss measurement; losses; overvoltage protection; switching; IGBT; dynamic saturation; elevated conduction loss; internal inductance; loss mechanism; resonant DC link inverter; snubber dump loss; soft switching converters; tail current bump; turn-off switching loss; turn-on; uneven current distribution; zero voltage switching; Conductivity; Insulated gate bipolar transistors; Inverters; Packaging; Probability distribution; Resonance; Snubbers; Switching converters; Switching loss; Zero voltage switching;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Power Electronics Specialists Conference, 1992. PESC '92 Record., 23rd Annual IEEE
Conference_Location :
Toledo
Print_ISBN :
0-7803-0695-3
Type :
conf
DOI :
10.1109/PESC.1992.254773
Filename :
254773
Link To Document :
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