Study of the applicability of self-driven synchronous rectification to resonant topologies

Author

Cobos, Jose A. ; Sebastian, J. ; Uceda, J. ; de la Cruz, E. ; Gras, J.M.

Author_Institution

Univ. Politecnica de Madrid, Spain

fYear

1992

fDate

29 Jun-3 Jul 1992

Firstpage

933

Abstract

Synchronous rectification techniques applied to high-frequency resonant topologies are studied. The on-resistance reduction of the MOSFET synchronous rectifier produces an increase of the parasitic capacitances. A selection of the resonant topologies where these capacitances are absorbed by the resonant tank, allowing self-driving of the synchronous rectifier, is presented. High efficiency has been obtained in a low-output-voltage (5 V and 3.3 V) forward ZVS-MRC with resonant synchronous rectification. Layout effects appeared to be very important at high switching frequencies. Even better results are expected in a hybrid prototype using specific low gate resistance MOSFETs as synchronous rectifiers

Keywords

insulated gate field effect transistors; power supplies to apparatus; rectification; MOSFET synchronous rectifier; high efficiency; multi-resonant converter; on-resistance reduction; parasitic capacitances; power supplies; resonant tank; resonant topologies; self-driven synchronous rectification; zero voltage switching; Diodes; Low voltage; MOSFET circuits; Power MOSFET; Power supplies; Rectifiers; Resonance; Switching frequency; Testing; Topology;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Electronics Specialists Conference, 1992. PESC '92 Record., 23rd Annual IEEE

Conference_Location

Toledo

Print_ISBN

0-7803-0695-3

Type

conf

DOI

10.1109/PESC.1992.254783

Filename

254783