Title :
A 5-GHz SiGe HBT return-to-zero comparator
Author :
Gao, Weinan ; Snelgrove, W. Martin ; Varelas, Theodore ; Kovacic, Stephen J. ; Harame, David L.
Author_Institution :
Dept. of Electron., Carleton Univ., Ottawa, Ont., Canada
Abstract :
A monolithic comparator implemented in a SiGe HBT technology is presented. The circuit employs a resettable slave stage, which was carefully designed to produce return-to-zero output data. Operation with sampling rates up to 5-GHz has been demonstrated. The comparator chip has an input range of 1.5 V, dissipates 89 mW from a 3-volt supply, and occupies a die area of 407×143 μm2
Keywords :
Ge-Si alloys; bipolar integrated circuits; comparators (circuits); heterojunction bipolar transistors; mixed analogue-digital integrated circuits; semiconductor materials; 1.5 V; 3 V; 5 GHz; 89 mW; SiGe; SiGe HBT technology; comparator chip; monolithic comparator; resettable slave stage; return-to-zero comparator; Circuit synthesis; Clocks; Digital communication; Germanium silicon alloys; Heterojunction bipolar transistors; Resistors; Sampling methods; Silicon germanium; Telecommunications; Voltage;
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology Meeting, 1995., Proceedings of the 1995
Conference_Location :
Minneapolis, MN
Print_ISBN :
0-7803-2778-0
DOI :
10.1109/BIPOL.1995.493890
