SOI : Materials to Systems

There is increased interest in the steam oxidation of AlxGat-xAs, following the pioneering work done at University of Illinoisl. We report the first demonstration of p-HEMTs in GaAs On Insulator (GOI) technology using Alz03 formed by the steam oxidation of AlAs as the buffer insulator. p-HEMT is one of the most widely used device in high speed applicatilons,including wireless communications. The GOI p-HEMT promises to be a high output resistance, high efficiency, high linearity device, attractive for high frequency communication applications.