DocumentCode
3428196
Title
VBIC95: An improved vertical, IC bipolar transistor model
Author
McAndrew, Colin ; Seitchik, Jerry ; Bowers, Derek ; Dunn, Mark ; Foisy, Mark ; Getreu, Ian ; McSwain, Marc ; Moinian, Shahriar ; Parker, James ; Van Wijnen, Paul ; Wagner, Larry
Author_Institution
AT&T/Motorola, Tempe, AZ, USA
fYear
1995
fDate
2-3 Oct 1995
Firstpage
170
Lastpage
177
Abstract
This paper presents a vertical BJT model developed by IC and CAD industry representatives as a replacement for the SPICE Gummel-Poon model. VBIC95 includes improved modeling of the Early effect (output conductance), substrate current, quasi-saturation, and behavior over temperature
Keywords
bipolar integrated circuits; bipolar transistors; equivalent circuits; integrated circuit modelling; semiconductor device models; Early effect; VBIC95; output conductance; quasi-saturation; substrate current; vertical BJT model; vertical IC bipolar transistor model; Bipolar integrated circuits; Bipolar transistors; Cathode ray tubes; Educational institutions; Instruments; Integrated circuit modeling; SPICE; Substrates; Temperature; Testing;
fLanguage
English
Publisher
ieee
Conference_Titel
Bipolar/BiCMOS Circuits and Technology Meeting, 1995., Proceedings of the 1995
Conference_Location
Minneapolis, MN
Print_ISBN
0-7803-2778-0
Type
conf
DOI
10.1109/BIPOL.1995.493891
Filename
493891
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