• DocumentCode
    34282
  • Title

    InGaAs/GaAs quantum well lasers grown on exact GaP/Si (001)

  • Author

    Xue Huang ; Yuncheng Song ; Masuda, T. ; DaeHwan Jung ; Minjoo Lee

  • Author_Institution
    Dept. of Electr. Eng., Yale Univ., New Haven, CT, USA
  • Volume
    50
  • Issue
    17
  • fYear
    2014
  • fDate
    Aug. 14 2014
  • Firstpage
    1226
  • Lastpage
    1227
  • Abstract
    InGaAs/GaAs strained quantum well lasers on both GaP and exact Si (001) via an epitaxial GaP/Si template are developed. Ridge lasers of length 1.2 mm and width 80 μm on GaP and GaP/Si templates show threshold current densities of 1.6 and 5.6 kA/cm2, respectively, in pulsed mode at room temperature. The emission wavelength of 1043 nm for lasers on GaP/Si was red shifted from 1030 nm for lasers on GaP and GaAs, due to the thermal mismatch with the Si substrate.
  • Keywords
    elemental semiconductors; gallium arsenide; gallium compounds; indium compounds; quantum well lasers; red shift; semiconductor quantum wells; silicon; GaP-Si; InGaAs-GaAs; epitaxial GaP-Si template; pulsed mode; quantum well lasers; red shift; ridge lasers; room temperature; size 1.2 mm; size 80 mum; thermal mismatch; threshold current densities; wavelength 1030 nm; wavelength 1043 nm;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el.2014.2077
  • Filename
    6880224
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=34282