Title :
InGaAs/GaAs quantum well lasers grown on exact GaP/Si (001)
Author :
Xue Huang ; Yuncheng Song ; Masuda, T. ; DaeHwan Jung ; Minjoo Lee
Author_Institution :
Dept. of Electr. Eng., Yale Univ., New Haven, CT, USA
Abstract :
InGaAs/GaAs strained quantum well lasers on both GaP and exact Si (001) via an epitaxial GaP/Si template are developed. Ridge lasers of length 1.2 mm and width 80 μm on GaP and GaP/Si templates show threshold current densities of 1.6 and 5.6 kA/cm2, respectively, in pulsed mode at room temperature. The emission wavelength of 1043 nm for lasers on GaP/Si was red shifted from 1030 nm for lasers on GaP and GaAs, due to the thermal mismatch with the Si substrate.
Keywords :
elemental semiconductors; gallium arsenide; gallium compounds; indium compounds; quantum well lasers; red shift; semiconductor quantum wells; silicon; GaP-Si; InGaAs-GaAs; epitaxial GaP-Si template; pulsed mode; quantum well lasers; red shift; ridge lasers; room temperature; size 1.2 mm; size 80 mum; thermal mismatch; threshold current densities; wavelength 1030 nm; wavelength 1043 nm;
Journal_Title :
Electronics Letters
DOI :
10.1049/el.2014.2077
