Title :
Modeling of the substrate effect in high-speed Si-bipolar ICs
Author :
Pfost ; Rein, H.M. ; Holzwarth, T.
Author_Institution :
AG Halbleiterbauelemente, Ruhr-Univ., Bochum, Germany
Abstract :
The contribution of the p- substrate and channel stopper on the equivalent circuits of Si-bipolar transistors and bond pads are theoretically and experimentally investigated up to very high frequencies. Equivalent substrate circuits are derived and verified by numerical simulation using a new computer program. The validity of both the numerical simulation results and the equivalent circuits are checked by on-wafer measurements up to 20 GHz
Keywords :
bipolar integrated circuits; circuit analysis computing; elemental semiconductors; equivalent circuits; integrated circuit modelling; silicon; substrates; 20 GHz; Si; Si bipolar transistors; bond pads; channel stopper; computer program; equivalent circuits; high-speed bipolar ICs; modeling; numerical simulation; p- substrate; substrate effect; Bonding; Capacitors; Carbon capture and storage; Circuit simulation; Dielectric substrates; Equivalent circuits; Frequency; Microelectronics; Numerical simulation; Resistors;
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology Meeting, 1995., Proceedings of the 1995
Conference_Location :
Minneapolis, MN
Print_ISBN :
0-7803-2778-0
DOI :
10.1109/BIPOL.1995.493893
