Title :
A 3 V supply voltage, DC-18 GHz SiGe HBT wideband amplifier
Author :
Schumacher, H. ; Gruhle, A. ; Erben, U. ; Kibbel, H. ; König, U.
Author_Institution :
Ulm Univ., Germany
Abstract :
We report a wideband, low power consumption monolithic amplifier using SiGe heterojunction bipolar transistors which, at 50 mW power consumption, provides 9.5 dB of gain from DC through 18 GHz, with 5.3 dB noise figure. 1.6 V operation is possible with slight bandwidth reduction to 15 GHz, and less than 20 mW power consumption
Keywords :
Ge-Si alloys; MMIC amplifiers; bipolar MMIC; heterojunction bipolar transistors; semiconductor materials; wideband amplifiers; 0 to 18 GHz; 1.6 V; 15 to 18 GHz; 20 mW; 3 V; 5.3 dB; HBT wideband amplifier; SiGe; heterojunction bipolar transistors; low power consumption; monolithic amplifier; Broadband amplifiers; Energy consumption; Gain; Germanium silicon alloys; Heterojunction bipolar transistors; Low-noise amplifiers; Noise figure; Operational amplifiers; Silicon germanium; Voltage;
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology Meeting, 1995., Proceedings of the 1995
Conference_Location :
Minneapolis, MN
Print_ISBN :
0-7803-2778-0
DOI :
10.1109/BIPOL.1995.493895
