Simulating a BJT-MOSFET cascode-connected power switch suitable for resonant converters

Author

Duarte, J.L. ; Rozenboom, J. ; Peijnenburg, T. ; Kemkens, H.

Author_Institution

Eindhoven Univ. of Technol., Netherlands

fYear

1992

fDate

29 Jun-3 Jul 1992

Firstpage

893

Abstract

A cascode connection of a high-voltage bipolar transistor and a low-voltage MOSFET is modeled and simulated using PC-based SPICE software. A simple representation for the reverse recovery phenomena in the bipolar power transistor, which compensates the incompleteness of the PSPICE model is described. The effect of ferromagnetic hysteresis in the base drive transformer has been taken into account. Comparison of simulations with experimental results is provided. The use of this combinational switch is demonstrated in a 30 W class-E inverter breadboard operating at 270 kHz from a DC input voltage up to 310 V. The switch is capable of holding off voltages beyond 1500 V

Keywords

SPICE; bipolar transistors; circuit analysis computing; digital simulation; insulated gate field effect transistors; invertors; power convertors; power transistors; semiconductor switches; 1500 V; 270 kHz; 30 W; 310 V; BJT-MOSFET cascode-connected power switch; DC input voltage; PSPICE model; SPICE software; bipolar power transistor; class-E inverter breadboard; ferromagnetic hysteresis; low-voltage; resonant converters; reverse recovery phenomena; Circuit simulation; Current transformers; MOSFET circuits; Power semiconductor switches; Resonance; SPICE; Semiconductor devices; Switching circuits; Switching converters; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Electronics Specialists Conference, 1992. PESC '92 Record., 23rd Annual IEEE

Conference_Location

Toledo

Print_ISBN

0-7803-0695-3

Type

conf

DOI

10.1109/PESC.1992.254788

Filename

254788