Title :
High speed low power optical gate driver for 2.5 GBit/s ATM switching networks
Author :
Martin, Didier ; Konczykowska, Agnieszka
Author_Institution :
Lab. de Bagneux, CNET, Bagneux, France
Abstract :
In this paper an optical gates matrix driver suitable for 2.5 GBit/s ATM switching networks is described. It enables gate switching with typical current up to 150 mA in less than 200 ps. Circuit was realised using a 50 GHz baseline GaAs-GaAlAs heterojunction bipolar transistor (HBT) technology with low power and high speed concurrent objectives
Keywords :
B-ISDN; III-V semiconductors; aluminium compounds; asynchronous transfer mode; bipolar digital integrated circuits; driver circuits; gallium arsenide; heterojunction bipolar transistors; photonic switching systems; 150 mA; 2.5 Gbit/s; 200 ps; 50 GHz; ATM switching networks; B-ISDN; GaAs-GaAlAs; HBT technology; gate switching; heterojunction bipolar transistor; high speed driver; low power optical gate driver; Asynchronous transfer mode; Driver circuits; High speed optical techniques; Optical buffering; Optical devices; Optical fiber networks; Optical filters; Optical network units; Switching circuits; Telecommunication switching;
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology Meeting, 1995., Proceedings of the 1995
Conference_Location :
Minneapolis, MN
Print_ISBN :
0-7803-2778-0
DOI :
10.1109/BIPOL.1995.493896
