Optical properties of a Si binary optic microlens for infrared ray

Author

Fujikawa, Kazuhiko ; Hirakawa, Goichi ; Shiono, Teruhiro ; Nomura, Koji

Author_Institution

Matsusita Electron. Components Co. Ltd., Osaka, Japan

fYear

1997

fDate

26-30 Jan 1997

Firstpage

360

Lastpage

365

Abstract

We established fabrication technologies for a binary optic microlens. A Si etch rate of 1.5 μm/min and Si/photoresist selectivity of 40 were achieved when the RIE parameters were a ratio of O₂ in the SF₆-O₂ etching gas of 0.2 at a pressure of 100 mTorr and an rf power density of 0.2 W/cm². We also obtained good optical properties for a micro pyroelectric infrared sensor constructed with a Si binary optic microlens. The four-phase response is 1.9 times and the eight-phase response is 2.4 times larger than the two-phase response. These results nearly agree with those of the simulation for the phase microlens diffraction efficiency ratio

Keywords

elemental semiconductors; infrared detectors; integrated optics; lenses; microsensors; optical fabrication; pyroelectric detectors; silicon; sputter etching; 100 mtorr; O₂; RIE parameters; SF₆; SF₆-O₂; SF₆-O₂ etching gas; Si; Si binary optic microlens; Si etch rate; Si/photoresist selectivity; eight-phase response; fabrication technologies; four-phase response; micro pyroelectric infrared sensor; phase microlens diffraction efficiency ratio; rf power density; simulation; Etching; Infrared sensors; Lenses; Microoptics; Optical device fabrication; Optical diffraction; Optical sensors; Pyroelectricity; Resists; Time factors;

fLanguage

English

Publisher

ieee

Conference_Titel

Micro Electro Mechanical Systems, 1997. MEMS '97, Proceedings, IEEE., Tenth Annual International Workshop on

Conference_Location

Nagoya

ISSN

1084-6999

Print_ISBN

0-7803-3744-1

Type

conf

DOI

10.1109/MEMSYS.1997.581856

Filename

581856