DocumentCode :
3428300
Title :
Optical properties of a Si binary optic microlens for infrared ray
Author :
Fujikawa, Kazuhiko ; Hirakawa, Goichi ; Shiono, Teruhiro ; Nomura, Koji
Author_Institution :
Matsusita Electron. Components Co. Ltd., Osaka, Japan
fYear :
1997
fDate :
26-30 Jan 1997
Firstpage :
360
Lastpage :
365
Abstract :
We established fabrication technologies for a binary optic microlens. A Si etch rate of 1.5 μm/min and Si/photoresist selectivity of 40 were achieved when the RIE parameters were a ratio of O2 in the SF6-O2 etching gas of 0.2 at a pressure of 100 mTorr and an rf power density of 0.2 W/cm2. We also obtained good optical properties for a micro pyroelectric infrared sensor constructed with a Si binary optic microlens. The four-phase response is 1.9 times and the eight-phase response is 2.4 times larger than the two-phase response. These results nearly agree with those of the simulation for the phase microlens diffraction efficiency ratio
Keywords :
elemental semiconductors; infrared detectors; integrated optics; lenses; microsensors; optical fabrication; pyroelectric detectors; silicon; sputter etching; 100 mtorr; O2; RIE parameters; SF6; SF6-O2; SF6-O2 etching gas; Si; Si binary optic microlens; Si etch rate; Si/photoresist selectivity; eight-phase response; fabrication technologies; four-phase response; micro pyroelectric infrared sensor; phase microlens diffraction efficiency ratio; rf power density; simulation; Etching; Infrared sensors; Lenses; Microoptics; Optical device fabrication; Optical diffraction; Optical sensors; Pyroelectricity; Resists; Time factors;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Micro Electro Mechanical Systems, 1997. MEMS '97, Proceedings, IEEE., Tenth Annual International Workshop on
Conference_Location :
Nagoya
ISSN :
1084-6999
Print_ISBN :
0-7803-3744-1
Type :
conf
DOI :
10.1109/MEMSYS.1997.581856
Filename :
581856
Link To Document :
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