Title :
A precise model for the transient characteristics of power diodes
Author :
Kraus, R. ; Hoffmann, K. ; Mattausch, H.J.
Author_Institution :
Bundeswehr Munich Univ., Germany
fDate :
29 Jun-3 Jul 1992
Abstract :
A power diode model for circuit simulations is described. All important phenomena like transient behavior, temperature dependence, emitter recombination, mobile charge carriers in depletion layer, carrier multiplication, and self-heating are included. Comparisons between simulations and measurements show less than 10% deviation of current and voltage over the temperature range of 25°C-125°C
Keywords :
circuit analysis computing; digital simulation; semiconductor device models; semiconductor diodes; transients; 25 to 125 degC; carrier multiplication; circuit simulations; depletion layer; emitter recombination; mobile charge carriers; model; power diodes; self-heating; temperature dependence; transient characteristics; Charge carriers; Circuit simulation; Current measurement; Differential equations; Diodes; Power measurement; Predictive models; Temperature dependence; Temperature distribution; Voltage;
Conference_Titel :
Power Electronics Specialists Conference, 1992. PESC '92 Record., 23rd Annual IEEE
Conference_Location :
Toledo
Print_ISBN :
0-7803-0695-3
DOI :
10.1109/PESC.1992.254792
