DocumentCode :
3428353
Title :
First Demonstration of p-HEMTs in the newly developed GaAs On Insulator (GOI) Technology
Author :
Parikh, P. ; Chavarkar, P. ; Wu, Ying Fa ; Pinsukanjana, P. ; Mishra, Umesh K.
Author_Institution :
University of California, Santa Barbara
fYear :
1996
fDate :
8-11 Dec. 1996
Firstpage :
931
Lastpage :
933
Abstract :
Impedance probes, which are well known in geophysical prospection, in particular for ground permittivity investigations, have been successfully transposed to space plasmas. Transmitting and receiving electrodes are used for measuring on open circuit the dynamic impedance of the system at several fixed frequencies over a range that includes characteristic frequencies of the ambient plasma. The measurements are then interpreted using a suitable theory and the values of plasma parameters, such as the electron density, temperature, and possibly the relative velocity of the plasma and the spacecraft, can be deduced. To show how powerful this technique is, results obtained in the Earth??s plasmasphere by the mutual impedance probe onboard ROSETTA are presented.
Keywords :
Cable insulation; Epitaxial layers; Gallium arsenide; Leakage current; Oxidation; Substrates; Wireless communication;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices Meeting, 1996. IEDM '96., International
Conference_Location :
San Francisco, CA, USA
ISSN :
0163-1918
Print_ISBN :
0-7803-3393-4
Type :
conf
DOI :
10.1109/IEDM.1996.554132
Filename :
554132
Link To Document :
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