DocumentCode
3428453
Title
The p-MOS controlled lateral thyristor: A MOS controllable thyristor suitable for integration
Author
Chen, W. ; Amaratunga, G.A.J.
Author_Institution
Dept. of Eng., Cambridge Univ., UK
fYear
1995
fDate
2-3 Oct 1995
Firstpage
202
Lastpage
205
Abstract
A novel CMOS compatible lateral thyristor is proposed in this paper. Its thyristor conduction is fully controlled by a p-MOS gate. Loss of MOS control due to parasitic latch-up has been eliminated and triggering of the main thyristor at lower forward current achieved. The device operation has been verified by 2D numerical simulations and experimental fabrication
Keywords
CMOS integrated circuits; MOS-controlled thyristors; power integrated circuits; 2D numerical simulations; CMOS compatible thyristor; MOS controlled lateral thyristor; p-MOS gate; parasitic latchup elimination; Anodes; Bipolar transistors; Cathodes; Charge carrier processes; Conductivity; Current density; MOS devices; Numerical simulation; Thyristors; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Bipolar/BiCMOS Circuits and Technology Meeting, 1995., Proceedings of the 1995
Conference_Location
Minneapolis, MN
Print_ISBN
0-7803-2778-0
Type
conf
DOI
10.1109/BIPOL.1995.493898
Filename
493898
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