Title :
A 5.8 GHz low noise amplifier for wireless LAN applications in silicon bipolar technology
Author :
Schuppener, Gerd ; Mokhtari, Mehran ; Kerzar, Boris
Author_Institution :
Dept. of Electron., R. Inst. of Technol., Stockholm, Sweden
Abstract :
A monolithic low-noise amplifier for operation in the 5.8 GHz band is described. Different versions have been implemented each operating over a different range of supply voltage. At 5 V, the amplifier´s gain is about 16 dB, with a noise figure of 4.1 dB and 1 dB compression point at -15 dBm input power. The circuits have been designed utilizing Ericsson Components 0.6 micron silicon bipolar technology (P71), featuring n-p-n transistors with fT and fmax of about 20 GHz
Keywords :
MMIC amplifiers; bipolar MMIC; bipolar analogue integrated circuits; elemental semiconductors; integrated circuit noise; silicon; wireless LAN; 0.6 micron; 16 dB; 4.1 dB; 5 V; 5.8 GHz; Ericsson Components technology; Si; Si bipolar technology; inductor model; low noise amplifier; monolithic LNA; onchip spiral inductors; wireless LAN applications; Circuits; Current density; Impedance matching; Isolation technology; Local area networks; Low-noise amplifiers; Noise figure; Radiofrequency amplifiers; Silicon; Wireless LAN;
Conference_Titel :
Electronics, Circuits and Systems, 1999. Proceedings of ICECS '99. The 6th IEEE International Conference on
Conference_Location :
Pafos
Print_ISBN :
0-7803-5682-9
DOI :
10.1109/ICECS.1999.813223
